DETAILED NOTES ON GERMANIUM

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and after that the composition is cycled via oxidizing and annealing phases. Mainly because of the preferential oxidation of Si around Ge [sixty eight], the original Si1–Expense. Apparently, the team uncovered that growing the Si cap t